Brunnthal-Faistenhaar, Germany

Hans-Juergen Mattausch


Average Co-Inventor Count = 4.0

ph-index = 3

Forward Citations = 54(Granted Patents)


Location History:

  • Brunnthal-Faistenhhar, DE (1990)
  • Kirchheim, DE (1991)
  • Brunnthal-Faistenhaar, DE (1991 - 1992)

Company Filing History:


Years Active: 1990-1992

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4 patents (USPTO):Explore Patents

Title: Innovations of Hans-Juergen Mattausch

Introduction

Hans-Juergen Mattausch is a notable inventor based in Brunnthal-Faistenhaar, Germany. He has made significant contributions to the field of memory technology, holding a total of 4 patents. His work focuses on enhancing the efficiency and reliability of static memory cells.

Latest Patents

One of his latest patents is titled "Hierarchically constructed memory having static memory cells." This invention describes a static memory constructed in multiple hierarchy levels. It outlines beneficial realization possibilities regarding surface utilization for drive and read-out circuits in the second hierarchy level, which are particularly critical. The design utilizes memory cells that provide a strong cell signal, minimizing the expense needed in the read circuit. By relocating peripheral circuits into higher hierarchy levels, the invention achieves a short access time and reduced surface requirements.

Another significant patent is for a "Static memory cell." This patent discloses memory cells that eliminate the need for analog circuits in memory peripheral circuits when used in static memory modules. The design aims to enhance reliability against technology modifications and parameter fluctuations. Writing occurs from a write data line via a write selection transistor, while reading is done through a read selection transistor onto a read data line. A second inverter, formed of two field-effect transistors, serves as a feedback element to maintain cell information statically. The implemented asymmetry in the dimensioning between the first and second inverters significantly reduces susceptibility to information loss during read-out compared to previously known memory cells. Notably, precharging of the read data line is not required with these memory cells.

Career Highlights

Hans-Juergen Mattausch is currently employed at Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to focus on innovative memory technologies that have practical applications in various electronic devices.

Collaborations

Throughout his career, Mattausch has collaborated with notable colleagues, including Gerd Neuendorf and Bernhard Hoppe. These collaborations have contributed to the advancement of memory technology and the successful development of his patents.

Conclusion

Hans-Juergen Mattausch's contributions to memory technology through his innovative patents demonstrate his expertise and commitment to advancing the field. His work continues to influence the design and functionality of static memory systems.

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