Hans-Joest Herzog

Title: The Innovations of Hans-Joest Herzog

Introduction

Hans-Joest Herzog is a notable inventor based in Neu-Ulm, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on methods and materials that enhance the production and functionality of semiconductor devices.

Latest Patents

One of Herzog's latest patents is a method for producing a spatially periodic semiconductor layer structure. This method involves creating a superlattice composed of an alternating arrangement of strained semiconductor layers of at least two different compositions. The innovation includes a doped layer that extends parallel to the heterojunction, optimizing the semiconductor layer's performance.

Another significant patent is for a mask used in X-ray lithography. This invention is particularly relevant for the manufacture of very-large-scale integration (VLSI) semiconductor components. The mask is designed to be economical and reliable, capable of transferring absorber structures down to the submicron range. It features a tension-compensated carrier membrane made of simultaneously boron and germanium-doped silicon, which enhances optical alignment and reduces mechanical distortions.

Career Highlights

Throughout his career, Herzog has worked with various companies, including Icentia Patent-Verwaltungs-GmbH and Licentia Patent-Verwaltungs GmbH. His experience in these organizations has contributed to his expertise in patent management and semiconductor technology.

Collaborations

Some of his notable coworkers include Jurgen Hersener and Helmut Jorke. Their collaboration has likely fostered innovative ideas and advancements in their respective fields.

Conclusion

Hans-Joest Herzog's contributions to semiconductor technology through his patents demonstrate his innovative spirit and technical expertise. His work continues to influence the development of advanced semiconductor devices.