Company Filing History:
1 out of 8,282 
1 out of 10 Years Active: 2004
Title: The Innovations of Hans-Jörg Osten
Introduction
Hans-Jörg Osten is a notable inventor based in Muellrose, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon-germanium hetero bipolar transistors. With a total of 2 patents to his name, Osten's work has had a considerable impact on high-frequency applications.
Latest Patents
Osten's latest patents include a silicon-germanium hetero bipolar transistor featuring a T-shaped implantation layer between the emitter and emitter contact area. This innovative transistor comprises a silicon collector layer, a boron-doped silicon-germanium base layer, a silicon emitter layer, and an emitter contact area. The fabrication process utilizes an epitaxy method on a pure silicon surface. An electrically inert material is incorporated into the epitaxial layers to link defects in the semiconductor structure and reduce dopant outdiffusion. This design allows for the fabrication of transistors suitable for high-frequency applications by either increasing the dopant dose in the base region or reducing the base layer's thickness. Additionally, carbon is incorporated into the base layer and the collector and/or emitter layers to enhance performance.
Career Highlights
Throughout his career, Hans-Jörg Osten has worked with prominent companies such as Nokia Corporation and IHP - Innovations for High-Performance Microelectronics. His expertise in semiconductor technology has positioned him as a key figure in the industry, contributing to advancements that benefit various high-tech applications.
Collaborations
Osten has collaborated with notable professionals in his field, including Gunther Lippert and Bernd Heinemann. These partnerships have fostered innovation and development in semiconductor technologies.
Conclusion
Hans-Jörg Osten's contributions to the field of semiconductor technology, particularly through his patents and collaborations, highlight his role as an influential inventor. His work continues to shape advancements in high-frequency applications, making a lasting impact on the industry.