Company Filing History:
Years Active: 2001-2004
Title: Innovative Contributions of Hans J Rutishauser in Ion Beam Technology
Introduction
Hans J Rutishauser is an accomplished inventor based in Lexington, MA, USA, with a notable record of three patents to his name. His innovations primarily focus on enhancing ion beam implantation technologies, which play a crucial role in semiconductor manufacturing and materials science.
Latest Patents
One of Rutishauser's latest patents is titled "Method of tuning electrostatic quadrupole electrodes of an ion beam implanter." This invention outlines a method to optimize the configuration of multiple electrostatic quadrupoles used in focusing ion beams. The process involves categorizing the quadrupoles into groups and applying a multi-variable heuristic algorithm to iteratively substitute voltage values. The goal is to maximize the final beam current by measuring the output downstream of the ion accelerator, thereby fine-tuning the quadrupoles for optimal performance. If the resultant ion beam does not meet suitable criteria, the method allows for adjustments by modifying the grouping and repeating the tuning.
Another significant innovation by Rutishauser is the "Continuously variable aperture for high-energy ion implanter." This patent describes a variable aperture assembly that regulates the ion beam current in an implantation system. The assembly consists of opposing aperture plates that adjust the gap between them through control arms operated by a drive mechanism. An integrated control system automatically modifies the aperture gap based on actual and desired ion beam currents, ensuring precise delivery of ions during the implantation process.
Career Highlights
Currently, Hans J Rutishauser works for Axcelis Technologies, Inc., a leader in ion implantation equipment for the semiconductor industry. His expertise and inventions have contributed significantly to advancements in the field, enhancing the efficiency and accuracy of ion beam systems.
Collaborations
Throughout his career, Rutishauser has collaborated with talented colleagues, including Paul A Loomis and Jun Lu. Together, they have worked on developing groundbreaking technologies that continue to push the boundaries of ion implantation techniques and applications.
Conclusion
Hans J Rutishauser's innovative contributions to ion beam technology showcase his commitment to advancing the field of semiconductor manufacturing. His patents reflect a deep understanding of the complexities involved in ion beam application and highlight the importance of continuous innovation in overcoming engineering challenges. As he continues his work at Axcelis Technologies, Rutishauser remains a vital figure in driving technological progress within the industry.