Munich, Germany

Hans J Fenzl

This inventor holds 1 USPTO granted patent. Top assignee: Siemens Aktiengesellschaft. Active years: 1985.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hans J Fenzl. Retrieved from https://idiyas.com/inventor/hans-j-fenzl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 1985

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1 patent (USPTO):Explore Patents

Title: The Innovations of Hans J. Fenzl

Introduction

Hans J. Fenzl is a notable inventor based in Munich, Germany. He has made significant contributions to the field of silicon manufacturing. His innovative approach has led to advancements in the production of high purity silicon granulate.

Latest Patents

Fenzl holds a patent for a "Method and apparatus for the manufacture of high purity silicon granulate." This patent describes a process for manufacturing silicon granules from molten silicon. The method involves pouring molten silicon into a liquid body to solidify and granulate the silicon. The liquid body used in this process is substantially free of impurities that could contaminate the silicon. He has 1 patent to his name.

Career Highlights

Fenzl is associated with Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to focus on innovative solutions in the field of materials science. His expertise in silicon manufacturing has positioned him as a key player in the industry.

Collaborations

Fenzl has collaborated with Wolfgang Dietze, a fellow innovator. Their partnership has fostered a creative environment that encourages the development of new technologies.

Conclusion

Hans J. Fenzl's contributions to silicon manufacturing exemplify the spirit of innovation. His patent and work at Siemens highlight his commitment to advancing technology in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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