Lorsch, Germany

Hans Heinz

This inventor holds 1 USPTO granted patent. Top assignee: Merck Patent Gesellschaft MIT Beschrankter Haftung. Active years: 1979.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hans Heinz. Retrieved from https://idiyas.com/inventor/hans-heinz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1979

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1 patent (USPTO):Explore Patents

Title: Innovations by Hans Heinz in Thin Layer Chromatography

Introduction

Hans Heinz is an accomplished inventor based in Lorsch, Germany. He has made significant contributions to the field of chromatography, particularly through his innovative patent related to coated carrier materials for thin layer chromatography.

Latest Patents

Hans Heinz holds a patent for a unique method of improving TLC plates. His invention involves using silicon dioxide with a medium pore volume and specific pore width to enhance the concentrating zone adjacent to the chromatography layer. This advancement is crucial for achieving better separation and analysis in thin layer chromatography.

Career Highlights

Hans Heinz is associated with Merck Patent Gesellschaft mit beschränkter Haftung, a leading company in the pharmaceutical and chemical sectors. His work has been instrumental in developing new materials and methods that enhance the efficiency of chromatographic techniques.

Collaborations

Some of his notable coworkers include Herbert Halpaap and Karl-Friedrich Krebs. Their collaborative efforts have contributed to the advancement of chromatography technologies.

Conclusion

Hans Heinz's innovative work in thin layer chromatography exemplifies the importance of research and development in scientific fields. His contributions continue to influence the industry and improve analytical techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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