Company Filing History:
Years Active: 2012-2015
Title: Innovations of Hans-Guenter Zimmer
Introduction
Hans-Guenter Zimmer is a notable inventor based in Reute, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and reliability of semiconductor devices.
Latest Patents
Zimmer's latest patents include innovative methods and structures that improve semiconductor performance. One of his patents, titled "Bonding contact area on a semiconductor substrate," describes a bonding contact area that features a reinforcing structure with a conductive material layer. This design includes a metal layer that serves as a bonding contact layer, with an oxide layer beneath it that enhances the bonding surface. The oxide layer extends beyond the edge of the bonding surface, ensuring a robust connection.
Another significant patent is "Manufacture of defect cards for semiconductor dies." This patent outlines a method for producing defect cards for individual dies on a wafer. It involves classifying defective dies based on their defect density and creating multiple defect cards to streamline the identification of issues in semiconductor manufacturing.
Career Highlights
Hans-Guenter Zimmer is currently employed at Micronas GmbH, where he continues to innovate in the semiconductor industry. His expertise and inventions have contributed to advancements in semiconductor technology, making him a valuable asset to his company.
Collaborations
Zimmer collaborates with talented professionals in his field, including coworkers Joerg Krause and Pascal Stumpf. Their combined efforts foster a creative environment that drives innovation and enhances the development of new technologies.
Conclusion
Hans-Guenter Zimmer's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence advancements in the field, ensuring the ongoing evolution of semiconductor devices.