Hans Gossmann

Title: An Insight into Inventor Hans Gossmann

Introduction

Hans Gossmann, an innovative inventor based in Gloucester, Massachusetts, has made significant contributions to the field of engineering with his pioneering work. With a focus on improving ion implantation processes, he holds a patent that showcases his expertise and inventive spirit.

Latest Patents

Hans Gossmann is recognized for his patent titled "System and technique for profile modulation using high tilt angles." This patent discloses a groundbreaking method that enables higher energy implants to be carried out while ensuring that the peak concentration depth remains shallower than previously achievable. The system utilizes an ion source, an accelerator, a platen along with a platen orientation motor, which permits large tilt angles. Notably, this system can perform hydrogen ion implants at energies up to 5 MeV, enabling exceptional precision and efficiency during the implantation process. By tilting the workpiece during implantation, his system can also facilitate implants that are usually conducted at lower energy levels, thereby providing similar resistivity profiles after thermal treatment as those achieved with lower energy implants. In certain cases, the peak concentration depth can be reduced by 3 µm or more by utilizing larger tilt angles.

Career Highlights

Gossmann is affiliated with Applied Materials, Inc., a leading company in the field of materials engineering. His work is characterized by a commitment to advancing technological capabilities within the semiconductor industry. As an inventor, he continually seeks to push the boundaries of current methodologies and drive innovation forward.

Collaborations

Throughout his career, Hans Gossmann has collaborated with talented colleagues, including Venkataramana R Chavva and KyuHa Shim. Their collective efforts have contributed to significant advancements in the technology and applications of ion implantation.

Conclusion

Hans Gossmann's inventive accomplishments illustrate a profound dedication to refining ion implantation techniques. His patented system represents a crucial advancement in the field, allowing for increased efficiency and precision in energy implants. As he continues to collaborate with fellow innovators, Gossmann's work promises to shape the future of materials engineering significantly.