Applied Materials, Inc.

Hans Gossmann

Rajesh Prasad

Scott Falk

Venkataramana R Chavva

Edwin A Arevalo

KyuHa Shim

A system and method that allows higher energy implants to be performed, wherein the peak concentration depth is shallower than would otherwise occur is disclosed. The system comprises an ion source, an accelerator, a platen and a platen orientation motor that allows large tilt angles. The system may be capable of performing implants of hydrogen ions at an implant energy of up to 5 MeV. By tilting the workpiece during an implant, the system can be used to perform implants that are typically performed at implant energies that are less than the minimum implant energy allowed by the system. Additionally, the resistivity profile of the workpiece after thermal treatment is similar to that achieved using a lower energy implant. In certain embodiments, the peak concentration depth may be reduced by 3 &#x3bc;m or more using larger tilt angles.

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Gloucester, MA, United States of America

Hans Gossmann