Dresden, Germany

Hans Glawischnig


Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2002

where 'Filed Patents' based on already Granted Patents

1 patent (USPTO):

Title: The Innovative Contributions of Hans Glawischnig

Introduction

Hans Glawischnig is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor production. His innovative methods have paved the way for advancements in technology and manufacturing processes.

Latest Patents

Hans Glawischnig holds a patent for a method titled "Deposition of various base layers for selective layer growth in semiconductor production." This patent describes a technique for the shrink-hole-free filling of trenches in semiconductor circuits. The method utilizes selective growth of a layer to be applied, allowing for a more efficient production process. The process involves applying a layer of selective growing material simultaneously to both a growth-promoting layer and a growth-inhibiting layer. This innovative approach enables the creation of patterns on raised portions while ensuring that the bottom of trenches is covered with a growth-promoting layer.

Career Highlights

Hans Glawischnig is associated with Infineon Technologies AG, a leading company in the semiconductor industry. His work has contributed to the development of advanced technologies that enhance the efficiency and effectiveness of semiconductor manufacturing.

Collaborations

Some of his notable coworkers include Markus M Kirchhoff and Hans-Peter Sperlich. Their collaborative efforts have further advanced the field of semiconductor technology.

Conclusion

Hans Glawischnig's contributions to semiconductor production through his innovative patent demonstrate his expertise and commitment to advancing technology. His work continues to influence the industry and inspire future innovations.

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