Company Filing History:
1 out of 117 
1 out of 16 Years Active: 2016
Title: The Innovations of Hans Christian Sigg
Introduction
Hans Christian Sigg is a notable inventor based in Mettmenstetten, Switzerland. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor component that addresses tensile strain states.
Latest Patents
Hans Christian Sigg holds a patent for a "Semiconductor component comprising micro-bridges for adjusting a tensile strain state and method for the production thereof." This invention focuses on adjusting the tensile strain state in semiconductor components. A pretensioned layer is applied to a substrate, and bridge structures are introduced in the layers through lithography and etching. The geometric structuring of the cross-section causes a redistribution of the originally homogeneous strain when the bridges are detached from the substrate. This innovative approach allows for a multiplication of stresses originally present in the sample, enhancing the performance of semiconductor devices.
Career Highlights
Throughout his career, Hans Christian Sigg has worked with prestigious institutions such as the Paul Scherrer Institute and ETH Zurich. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Hans has collaborated with notable colleagues, including Jerome Faist and Gustav Schiefler. Their combined efforts have further advanced research and development in the field of semiconductors.
Conclusion
Hans Christian Sigg's contributions to semiconductor technology through his innovative patent demonstrate his significant impact on the industry. His work continues to influence advancements in semiconductor components and their applications.