Munich, Germany

Hans Cerva

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2004.


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Hans Cerva

Introduction

Hans Cerva is a notable inventor based in Munich, Germany. He has made significant contributions to the field of ferroelectric materials, particularly through his innovative patent. His work has implications for memory technology, which is crucial in modern electronics.

Latest Patents

Hans Cerva holds a patent for a "Method for producing a ferroelectric layer." This method involves preparing a substrate and applying a layer of material that can be converted into a ferroelectric layer. The conversion is achieved by applying an outer electrical field aligned with the desired direction in the ferroelectric material, followed by heat treatment. The process also includes the formation of noble metal electrodes, which are essential for creating ferroelectric storage capacitors. This technology can lead to the development of ferroelectric memory arrangements that incorporate memory cells with transistors.

Career Highlights

Cerva's career is marked by his association with Infineon Technologies AG, where he has contributed to advancements in semiconductor technology. His innovative approach to ferroelectric materials has positioned him as a key figure in the field.

Collaborations

Hans Cerva has worked alongside notable colleagues such as Guenther Schindler and Volker Weinrich. Their collaborative efforts have furthered research and development in ferroelectric technologies.

Conclusion

Hans Cerva's contributions to the field of ferroelectric materials and memory technology are noteworthy. His innovative methods and collaborations have the potential to influence future advancements in electronics.

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