Helsinki, Finland

Hannu E Hanninen

This inventor holds 1 USPTO granted patent. Top assignee: Instrumentarium Corporation. Active years: 1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hannu E Hanninen. Retrieved from https://idiyas.com/inventor/hannu-e-hanninen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 56(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Hannu E Hanninen: Innovator in Gas Flow Measurement

Introduction

Hannu E Hanninen is a notable inventor based in Helsinki, Finland. He has made significant contributions to the field of gas flow measurement through his innovative designs. His work is characterized by a focus on enhancing the accuracy and efficiency of flow measurement devices.

Latest Patents

Hannu holds a patent for a gas flow restricting and directing device intended for flow measurement. This device features bilaterally located apertures that communicate via a measuring tube to a measuring device for pressure difference measurement. The design includes one or more baffles that guide the flowing gas to the apertures, improving measurement precision.

Career Highlights

Hannu is associated with Instrumentarium Corporation, where he applies his expertise in developing advanced measurement technologies. His work has been instrumental in advancing the capabilities of gas flow measurement devices.

Collaborations

Hannu has collaborated with notable colleagues such as Pekka Tuomo Merilainen and Kari Eskelinen. Their combined efforts have contributed to the development of innovative solutions in the field.

Conclusion

Hannu E Hanninen's contributions to gas flow measurement technology highlight his role as a key innovator in the industry. His patent and collaborative efforts reflect a commitment to advancing measurement accuracy and efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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