Poughkeepsie, NY, United States of America

Hannon S Yourke

This inventor holds 2 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1977-1979.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hannon S Yourke. Retrieved from https://idiyas.com/inventor/hannon-s-yourke

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 1977-1979

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2 patents (USPTO):Explore Patents

Title: Hannon S Yourke: Innovator in Electron Beam Technology

Introduction

Hannon S Yourke is a notable inventor based in Poughkeepsie, NY (US). He has made significant contributions to the field of electron beam technology, holding 2 patents that showcase his innovative approach to solving complex problems in semiconductor manufacturing.

Latest Patents

One of Hannon S Yourke's latest patents is titled "Method and apparatus for applying focus correction in E-beam system." This invention provides a method and apparatus for applying focus correction to an E-beam or charged particle system, compensating for wafer warp and mask tilt. The system includes a registration mechanism that measures the position of four registration marks with the beam, calculating the apparent magnification error of a given chip. It also incorporates means for using magnification and rotation error information to calculate a height error factor, applying a compensating current to a dynamic focusing coil of the electron beam. This adjustment moves the effective beam focal plane to align with the wafer or mask plane at each chip site.

Another significant patent is "Apparatus for detecting registration marks on a target such as a semiconductor wafer." In this invention, a square-shaped beam of charged particles is directed over a registration mark on the surface of a semiconductor wafer. A signal produced by a diode detector, responsive to backscattered electrons, peaks when the beam passes over the edges of the registration mark. The signal is then differentiated, filtered, and amplified to provide precise information regarding the beam's position relative to the wafer.

Career Highlights

Hannon S Yourke is currently employed at International Business Machines Corporation (IBM), where he continues to develop innovative solutions in the field of electron beam technology. His work has significantly impacted the efficiency and accuracy of semiconductor manufacturing processes.

Collaborations

Throughout his career, Hannon has collaborated with notable colleagues, including Samuel Kay Doran and Drew E Albrecht. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Hannon S Yourke's contributions to electron beam technology exemplify the spirit of innovation in the semiconductor industry. His patents reflect a deep understanding of the challenges faced in manufacturing, and his work continues to influence advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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