Company Filing History:
Years Active: 2016
Title: Hann-Ping Hwang: Innovator in Memory Technology
Introduction
Hann-Ping Hwang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology, particularly in static random access memory (SRAM). With a total of 2 patents to his name, Hwang continues to push the boundaries of innovation in this critical area of electronics.
Latest Patents
Hwang's latest patents include advancements in static random access memory and its manufacturing methods. The first patent focuses on a static random access memory and the manufacturing method thereof. This invention enhances the performance of SRAM by forming specific gate structures that are concave and adjusting the effective channel width ratio for these gate structures. The second patent provides a memory structure and an operation method that includes a triode for alternating current (TRIAC) and a memory cell, which is electrically connected to the TRIAC.
Career Highlights
Hann-Ping Hwang is currently employed at Powerchip Technology Corporation, a leading company in the semiconductor industry. His work at Powerchip has allowed him to develop innovative solutions that improve memory technology and contribute to the company's success.
Collaborations
Hwang collaborates with talented individuals such as Chen-Hao Huang and Yi-Chung Liang, who contribute to his projects and innovations. Their teamwork fosters a creative environment that enhances the development of new technologies.
Conclusion
Hann-Ping Hwang is a prominent figure in the field of memory technology, with a focus on static random access memory innovations. His patents reflect his commitment to enhancing performance in this area, and his work at Powerchip Technology Corporation showcases his impact on the industry.