The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Jan. 19, 2015
Applicant:
Powerchip Technology Corporation, Hsinchu, TW;
Inventors:
Yi-Chung Liang, Tainan, TW;
Chen-Hao Huang, Miaoli County, TW;
Li-Wei Liu, Kaohsiung, TW;
Hann-Ping Hwang, Hsinchu, TW;
Assignee:
Powerchip Technology Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); G11C 11/417 (2006.01); H01L 29/06 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 29/423 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); G11C 11/417 (2013.01); H01L 21/3065 (2013.01); H01L 21/3083 (2013.01); H01L 21/30604 (2013.01); H01L 21/823456 (2013.01); H01L 29/0642 (2013.01); H01L 29/4236 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01);
Abstract
A static random access memory and the manufacturing method thereof are provided. By forming the specific gate structure(s) to be concave gate structure(s) and by adjusting the ratio of the effective channel width for these gate structures, the performance of the static random access memory is enhanced.