Company Filing History:
Years Active: 2016-2025
Title: Hangi Jung: Innovator in Semiconductor Memory Technology
Introduction
Hangi Jung is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor memory devices, holding a total of 11 patents. His work focuses on enhancing the efficiency and functionality of memory technologies.
Latest Patents
Among his latest innovations, Hangi Jung has developed semiconductor memory devices that incorporate efficient serializers for data transfer. One of his notable patents describes an integrated circuit memory device that includes a serializer designed to convert multiple bits of parallel read data, synchronized with out-of-phase clock signals, into a serial stream. This conversion utilizes a Boolean logic circuit, which processes the parallel read data and clock signals at corresponding inputs.
Another significant patent involves a memory device that performs self-calibration by identifying its location within a memory module. This memory device features a command/address (CA) buffer that receives signals through a shared bus and a calibration logic circuit that determines its location on the bus. This self-calibration capability allows the memory device to operate effectively, even under varying operational conditions based on its location within the module.
Career Highlights
Hangi Jung is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in the development of advanced memory solutions.
Collaborations
Throughout his career, Hangi Jung has collaborated with notable colleagues, including Hun-Dae Choi and Wangsoo Kim. These partnerships have contributed to the advancement of innovative technologies in the semiconductor field.
Conclusion
Hangi Jung's contributions to semiconductor memory technology exemplify his dedication to innovation and excellence. His patents reflect a commitment to improving data transfer efficiency and memory device functionality.