The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
May. 12, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/16 (2006.01); H03K 19/003 (2006.01); H03K 19/00 (2006.01); G11C 11/4074 (2006.01); G11C 11/4099 (2006.01); G11C 11/4093 (2006.01); G11C 29/02 (2006.01); G11C 29/50 (2006.01); G11C 11/4076 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
H03K 19/0005 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); G11C 11/4093 (2013.01); G11C 11/4099 (2013.01); G11C 29/025 (2013.01); G11C 29/028 (2013.01); G11C 29/50008 (2013.01); G11C 11/4076 (2013.01); G11C 11/4082 (2013.01); G11C 2207/105 (2013.01);
Abstract
A memory device includes a first on-die termination circuit, a second on-die termination circuit, a voltage generator, and a code generator. The first on-die termination circuit may correspond to a data input buffer. The second on-die termination circuit may correspond to a command/address buffer. The voltage generator may generate a reference voltage. The code generator may generate a resistance calibration code of a selected one of the on-die termination circuits in response to the reference voltage. The reference calibration code may calibrate a resistance value of the selected on-die termination circuit.