Miaoli, Taiwan

Hang-Lang Lee

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Innolux Corporation. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hang-Lang Lee. Retrieved from https://idiyas.com/inventor/hang-lang-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: The Innovations of Hang-Lang Lee

Introduction

Hang-Lang Lee is a notable inventor based in Miaoli, Taiwan. He has made significant contributions to the field of radiation technology. His innovative work has led to the development of a unique radiation device that enhances the frequency modulation range of radiation signals.

Latest Patents

Hang-Lang Lee holds a patent for a radiation device. This device includes a first substrate, a second substrate, a dielectric layer disposed between the first and second substrates, and a film layer structure on the first substrate. The resistivity of the film layer structure is between 10 and 5×10Ω-cm. This design allows for an increased frequency modulation range of radiation signals.

Career Highlights

Hang-Lang Lee is currently employed at Innolux Corporation, a leading company in the display technology industry. His work at Innolux has allowed him to apply his innovative ideas in practical applications, contributing to advancements in radiation devices.

Collaborations

He has collaborated with talented coworkers such as Tang-Chin Hung and Pei-Chi Chen. Their teamwork has fostered an environment of innovation and creativity within their projects.

Conclusion

Hang-Lang Lee's contributions to radiation technology exemplify the impact of innovative thinking in the field. His patent and work at Innolux Corporation highlight his role as a significant inventor in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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