Hanbyung Park

Title: Hanbyung Park: Innovator in SRAM Technology

Introduction

Hanbyung Park is a notable inventor based in Yongin, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the design of SRAM cells. His innovative work has led to advancements that enhance the performance and efficiency of electronic devices.

Latest Patents

Hanbyung Park holds a patent for "SRAM cells using shared gate electrode configuration." This patent describes an SRAM cell that includes a first PMOS pass transistor with a first gate electrode on a first PMOS active region, and a first NMOS pass transistor with a second gate electrode on a first NMOS active region. The design features a first PMOS pull-up transistor and a first NMOS pull-down transistor that share a third gate electrode, which extends between the first PMOS and NMOS active regions. Additionally, the patent includes a second PMOS pass transistor and a second NMOS pass transistor, each with their respective gate electrodes, further enhancing the functionality of the SRAM cell.

Career Highlights

Hanbyung Park is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to be at the forefront of semiconductor innovation, contributing to the development of advanced memory technologies.

Collaborations

Throughout his career, Hanbyung Park has collaborated with esteemed colleagues, including Ho-Kwon Cha and Sunme Lim. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Hanbyung Park's contributions to SRAM technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and work at Samsung Electronics Co., Ltd. highlight his role as a key player in advancing electronic device performance.