Dallas, TX, United States of America

Han T Yuan


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 1980

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1 patent (USPTO):Explore Patents

Title: Han T Yuan: Innovator in Semiconductor Technology

Introduction

Han T Yuan is a notable inventor based in Dallas, TX, who has made significant contributions to the field of semiconductor technology. With a focus on enhancing the efficiency and functionality of integrated circuits, Yuan's work has implications for various digital applications.

Latest Patents

Yuan holds a patent for a MESFET semiconductor device and method of making it. This innovative device features a metal-semiconductor diode as the control element, along with a source and drain as other device elements. The fabrication method includes an implanted channel stopper beneath a thick field oxide, implanted source and drain regions, and various device channel implants. The design is optimized for high packing density and low-speed power product, making it particularly attractive for digital applications.

Career Highlights

Han T Yuan is currently employed at Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has allowed him to contribute to advancements in integrated circuit technology, further solidifying his reputation as an innovator in the field.

Collaborations

Yuan has collaborated with notable colleagues such as Henry M Darley and Theodore Warren Houston. These partnerships have fostered an environment of innovation and creativity, leading to advancements in semiconductor technology.

Conclusion

Han T Yuan's contributions to semiconductor technology through his patent and work at Texas Instruments Corporation highlight his role as a key innovator in the field. His advancements continue to influence digital applications and the future of integrated circuits.

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