Han-Sub Yoon

Title: The Innovations of Han-Sub Yoon

Introduction

Han-Sub Yoon is a prominent inventor based in Gyeonggi-do, South Korea. He is known for his significant contributions to the field of flash memory technology. His innovative work has led to the development of a unique NAND flash memory that utilizes a common P-well.

Latest Patents

Han-Sub Yoon holds a patent for a NAND flash memory that employs hot carrier injection and a method of operating the same. This invention involves forming a plurality of strings that constitute a page on a single P-well, allowing them to share the P-well. During the programming operation, a string selection transistor is turned off, and electrons are accumulated in a source or drain region in response to a bias voltage applied to the P-well. The accumulated electrons are then trapped in a charge trap layer of a memory cell when a program voltage is applied through a word line. Additionally, during the erase operation, holes accumulated in response to a bias voltage are trapped in the charge trap layer when an erase voltage is applied. This innovative flash memory performs NAND-type program and erase operations using hot carrier injection.

Career Highlights

Han-Sub Yoon is currently associated with Intellectual Discovery Co., Ltd., where he continues to advance his research and development in memory technologies. His work has been instrumental in enhancing the efficiency and performance of flash memory systems.

Collaborations

He has collaborated with notable colleagues, including Jong-Suk Lee and Kae-Dal Kwack, contributing to various projects that push the boundaries of memory technology.

Conclusion

Han-Sub Yoon's contributions to NAND flash memory technology exemplify the innovative spirit of modern inventors. His work not only advances the field but also sets the stage for future developments in memory systems.