The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2014

Filed:

Sep. 09, 2009
Applicants:

Han-sub Yoon, Gyeonggi-Do, KR;

Jong-suk Lee, Lexington, MA (US);

Kae-dal Kwack, Seoul, KR;

Inventors:

Han-Sub Yoon, Gyeonggi-Do, KR;

Jong-Suk Lee, Lexington, MA (US);

Kae-Dal Kwack, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A flash memory using hot carrier injection and a method of operating the same are provided. A plurality of strings constituting a page are formed on a single p-well and share the p-well. During a program operation, a string selection transistor is turned off, and electrons are accumulated in a source or drain region in response to a bias voltage applied to the p-well. Thereafter, the accumulated electrons are trapped in a charge trap layer of a memory cell in response to a program voltage applied through a word line. Also, during an erase operation, holes accumulated in response to a bias voltage applied to the p-well are trapped in the charge trap layer in response to an erase voltage. The flash memory performs NAND-type program and erase operations using hot carrier injection.


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