Newton, MA, United States of America

Han Q Le

This inventor holds 4 USPTO granted patents. Top assignee: Massachusetts Institute of Technology. Active years: 1992-2001.


% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 85(Granted Patents)


Company Filing History:


Years Active: 1992-2001

Loading Chart...
4 patents (USPTO):Explore Patents

Title: The Innovations of Han Q Le

Introduction

Han Q Le is a prominent inventor based in Newton, MA (US). He has made significant contributions to the field of photonics and laser technology. With a total of 4 patents, his work has advanced the capabilities of high-power laser systems and ultra-high-speed photoconductive devices.

Latest Patents

One of Han Q Le's latest patents is for a high-power multi-wavelength external cavity laser. This innovative laser source features a free space external cavity with multiple multimode optical gain elements. Each gain element generates multimode optical radiation at different wavelengths, enhancing the versatility of the laser system. Another notable patent involves ultra-high-speed photoconductive devices that utilize semi-insulating layers. This device comprises a homoepitaxial semi-insulating III-V layer, which is crucial for achieving high-speed performance in photoconductive applications.

Career Highlights

Han Q Le is affiliated with the Massachusetts Institute of Technology, where he continues to push the boundaries of research and innovation. His work has garnered attention for its practical applications in various technological fields.

Collaborations

Some of his notable coworkers include Frank W Smith and Arthur R Calawa, who have collaborated with him on various projects, contributing to the advancement of their shared research interests.

Conclusion

Han Q Le's contributions to the field of laser technology and photonics are noteworthy. His innovative patents reflect his commitment to advancing technology and improving performance in critical applications.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…