Han Liang

Title: Han Liang - Innovator in Semiconductor Technology

Introduction

Han Liang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and method for forming the same.

Latest Patents

Han Liang holds a patent for a semiconductor structure and a method for forming it. The patent describes a method that includes providing a substrate with a discrete first gate laminated structure formed on the substrate. It involves forming a unit dielectric layer covering a portion of a side wall of the first gate laminated structure, where the first gate laminated structure and the unit dielectric layer enclose a unit groove. An isolation spacer layer is formed on a side wall of the unit groove, which is in contact with the unit dielectric layer. A metal layer is then conformally applied, followed by annealing to create a metal silicide layer. This innovative approach optimizes the electrical performance of the semiconductor structure by increasing the breakdown voltage of a unit memory area.

Career Highlights

Throughout his career, Han Liang has worked with notable companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation in Shanghai and Semiconductor Manufacturing International Corporation in Beijing. His experience in these organizations has contributed to his expertise in semiconductor technology.

Collaborations

Han Liang has collaborated with various professionals in his field, including his coworker Wang Hai Ying. Their joint efforts have further advanced the development of semiconductor technologies.

Conclusion

Han Liang's contributions to semiconductor technology through his innovative patent and career highlights demonstrate his significant impact in the field. His work continues to influence advancements in semiconductor structures and methods.