Han-Gyun Jung

Title: Han-Gyun Jung: Innovator in Semiconductor Memory Technology

Introduction

Han-Gyun Jung is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor memory devices, holding a total of 2 patents. His work focuses on enhancing the efficiency and performance of memory technologies.

Latest Patents

One of Han-Gyun Jung's latest patents is titled "Circuit and method for controlling write recovery time in semiconductor memory device." This invention discloses a circuit and method for controlling the write recovery time (tWR) in semiconductor memory devices. The method involves receiving an automatic precharge write command and generating a tWR control signal, which is delayed from the moment the command is received until the last data segment is written. This innovation aims to reduce power consumption and clock noise by minimizing the operation of a counter in the circuit after the last data is written.

Another notable patent is the "Substrate bias voltage generating circuit for use in a semiconductor memory device." This invention provides a substrate voltage generating circuit that includes a charge pump for generating a substrate bias voltage in response to a clock signal. It features a first inverter type detector and a second differential amplifier type detector to ensure the substrate bias voltage reaches a target voltage, along with a driver for generating the clock signal based on the output of the detectors.

Career Highlights

Han-Gyun Jung is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to contribute to cutting-edge advancements in semiconductor technology.

Collaborations

Throughout his career, Han-Gyun Jung has collaborated with notable colleagues, including Seung-Bum Ko and Chi-Wook Kim. These collaborations have further enriched his contributions to the field.

Conclusion

Han-Gyun Jung is a distinguished inventor whose work in semiconductor memory technology has led to significant advancements. His innovative patents reflect his commitment to improving the efficiency and performance of memory devices.