Company Filing History:
Years Active: 2006-2008
Title: Innovations of Han-Chih Lin in Nonvolatile Memory Solutions
Introduction
Han-Chih Lin, a prominent inventor located in Hsin-Chu, Taiwan, is recognized for his significant contributions to the field of nonvolatile memory technology. With a total of two patents to his name, Lin has made remarkable strides in the development of innovative memory solutions that enhance performance and reliability in electronic devices.
Latest Patents
Among Lin's latest patents, a notable invention is a nonvolatile memory solution using single-poly pFlash technology. This innovation features a single-poly two-transistor PMOS memory cell specifically designed for multiple-time programming applications. The cell includes a PMOS floating gate transistor that shares a drain/source P+ diffusion region with a PMOS select gate transistor, all formed within a first n-well. A control plate for the floating gate transistor is established in a second n-well. Additionally, he has developed another version of the memory cell for one-time programming applications, which includes a PMOS floating gate transistor whose source is formed as a P+ diffusion region in a single n-well, with the source adapted to serve as the control plate for the floating gate transistor.
Career Highlights
Han-Chih Lin is currently employed at Chingis Technology Corporation, where he applies his expertise in memory solutions. His work has been pivotal in advancing the landscape of memory technology, allowing for improved functionalities in various electronic applications.
Collaborations
Throughout his career, Lin has collaborated with talented individuals in the industry, including his coworkers Alex Wang and Shang-De Chang. These partnerships have fostered a creative environment that has led to the successful development of innovative technologies.
Conclusion
In summary, Han-Chih Lin stands out as an influential inventor in the realm of nonvolatile memory technology. His patents exemplify his dedication to innovation and the improvement of electronic memory solutions. As technology continues to evolve, Lin's contributions will undoubtedly play a crucial role in shaping the future of memory applications.