Nanjing, China

Han Chen

This inventor holds 1 USPTO granted patent. Top assignee: Sandisk Technologies Inc.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Han Chen. Retrieved from https://idiyas.com/inventor/han-chen-0n1k3528

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: The Innovations of Han Chen

Introduction

Han Chen is a notable inventor based in Nanjing, China. He has made significant contributions to the field of non-volatile memory technology. His innovative approach has led to the development of a unique method for programming memory cells.

Latest Patents

Han Chen holds a patent for a non-volatile memory and method with adjusted timing for individual programming pulses. This invention features programming circuitry that outputs a series of programming pulses with increasing voltage levels. It allows for the parallel programming of a group of memory cells associated with a selected word line. The individual timing of these programming pulses is dynamically adjusted based on the relative numbers of program-enabled and program-inhibited memory cells.

Career Highlights

Han Chen is currently employed at SanDisk Technologies Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of non-volatile memory systems.

Collaborations

Some of his notable coworkers include Man Lung Mui and Kou Tei, who have collaborated with him on various projects within the company.

Conclusion

Han Chen's contributions to non-volatile memory technology exemplify the spirit of innovation. His patent reflects a significant advancement in programming methods, showcasing his expertise and dedication to the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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