Company Filing History:
Years Active: 2021-2023
Title: Innovations by Han-bin Noh in Resistive Memory Technology.
Introduction
Han-bin Noh is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of resistive memory devices. With a total of 2 patents, his work focuses on enhancing the performance and reliability of memory technology.
Latest Patents
One of Han-bin Noh's latest patents is a method of operating a resistive memory device to increase read margin. This method involves applying a write pulse to a memory cell, programming it to a target resistance state. Following this, a post-write pulse is applied to increase the resistance of the memory cell in the target state. The post-write pulse is designed as a single pulse with at least n stepped voltage levels, where n is an integer equal to or greater than 2. The n-th stepped voltage level is set lower than the minimum threshold voltage level of the target resistance state, which is modified by the (n-1)-th stepped voltage level of the post-write pulse.
Career Highlights
Han-bin Noh is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to explore innovative solutions in memory technology.
Collaborations
He has collaborated with notable coworkers, including Kwang-woo Lee and Kyu-Rie Sim, contributing to advancements in their field.
Conclusion
Han-bin Noh's contributions to resistive memory technology demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of memory devices and their operational efficiencies.