Hakan Altan

Title: Hakan Altan: Innovator in Terahertz Spectroscopy

Introduction

Hakan Altan is a prominent inventor based in New York, NY (US). He has made significant contributions to the field of terahertz spectroscopy, particularly in the identification of defect densities in high-k dielectric films. His innovative approach combines advanced techniques to enhance the measurement processes in semiconductor technology.

Latest Patents

Hakan Altan holds a patent titled "Non-linear terahertz spectroscopy for defect density identification in high k dielectric films." This patent describes methods to infer the density of defects in high-k dielectric films in a non-contact, non-invasive, and non-destructive manner. The technology utilizes terahertz (THz) radiation to measure changes in electrical conductivity of the films before and after illumination with visible light. The visible light photoionizes the defects, altering the electrical conductivity and affecting the transmission or reflection of THz radiation from the films. This technique allows for measurements to be made as soon as wafers are fabricated, making it applicable to wafers of any size.

Career Highlights

Hakan Altan is affiliated with the New Jersey Institute of Technology, where he continues to advance research in his field. His work has garnered attention for its practical applications in semiconductor manufacturing and quality control.

Collaborations

Hakan has collaborated with notable colleagues, including John F. Federici and Haim Grebel. Their combined expertise contributes to the innovative research and development in terahertz spectroscopy.

Conclusion

Hakan Altan's contributions to terahertz spectroscopy represent a significant advancement in the identification of defects in high-k dielectric films. His innovative methods and collaborative efforts continue to influence the field of semiconductor technology.