The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2008

Filed:

Apr. 06, 2007
Applicants:

John Francis Federici, Westfield, NJ (US);

Haim Grebel, Livingston, NJ (US);

Hakan Altan, New York, NY (US);

Inventors:

John Francis Federici, Westfield, NJ (US);

Haim Grebel, Livingston, NJ (US);

Hakan Altan, New York, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 5/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods to infer the density of defects in high κ dielectric films in a non-contact, non-invasive and non-destructive manner. THz radiation is employed to measure the change in electrical conductivity of the films before and after illumination with visible light, where the visible light photoionizes the defects thereby changing the electrical conductivity and changing the transmission (or reflection) of THz radiation from the films. The disclosed techniques can be employed to make measurements as soon as wafers are fabricated. The technology is applicable to wafers of any size.


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