Hanam-si, South Korea

Hak-Soo Yu

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hak-Soo Yu. Retrieved from https://idiyas.com/inventor/hak-soo-yu-pe1u3e1n

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hak-Soo Yu: Innovator in Memory Device Technology

Introduction

Hak-Soo Yu is a prominent inventor based in Hanam-si, South Korea. He is known for his contributions to the field of memory devices, particularly through his innovative patent that enhances internal processing capabilities.

Latest Patents

Hak-Soo Yu holds a patent for a memory device with an internal processing interface. This memory device includes a processor in memory (PIM) circuit that features an internal processor designed to perform internal processing operations. The interface circuit connected to the PIM circuit includes a command address decoder, a voltage signal receiver, and a command mode decoder. These components work together to control the internal processing operation of the PIM circuit effectively. He has 1 patent to his name.

Career Highlights

Hak-Soo Yu is currently employed at Samsung Electronics Ltd., a leading global technology company. His work at Samsung has positioned him at the forefront of memory technology innovation, contributing to advancements that impact various electronic devices.

Collaborations

Throughout his career, Hak-Soo Yu has collaborated with notable colleagues, including Shinhaeng Kang and Yuhwan Ro. These collaborations have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Hak-Soo Yu's contributions to memory device technology exemplify the innovative spirit of modern inventors. His work continues to influence the field and drive advancements in electronic memory solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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