This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1998.
Company Filing History:
Years Active: 1998
Title: Hak-Soo Yoo: Innovator in Semiconductor Memory Technology
Introduction
Hak-Soo Yoo is a prominent inventor based in Seoul, South Korea. He is known for his contributions to the field of semiconductor memory technology. His innovative work has led to the development of a significant patent that enhances data output control in synchronous semiconductor memory devices.
Latest Patents
Hak-Soo Yoo holds a patent for a "Data output buffer control circuit of a synchronous semiconductor memory." This invention describes a method of controlling the buffering of output data by synchronizing with an external system clock. The patent outlines the steps of generating an internal clock pulse, transferring data from a chip to a pair of data output lines in response to the internal clock pulse, and generating an output mode control signal in synchronism with the internal clock pulse. The invention also includes a data output buffer control apparatus that operates in synchronism with an externally applied system clock pulse.
Career Highlights
Hak-Soo Yoo is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to focus on advancing semiconductor technologies and improving data output mechanisms in memory devices. His innovative contributions have positioned him as a key figure in the field.
Collaborations
Hak-Soo Yoo has collaborated with Jong-Hak Won, a fellow innovator in the semiconductor industry. Their partnership has fostered advancements in memory technology and has contributed to the success of their projects at Samsung.
Conclusion
Hak-Soo Yoo's work in semiconductor memory technology exemplifies the spirit of innovation. His patent for a data output buffer control circuit showcases his expertise and commitment to advancing technology in this critical field. His contributions continue to influence the development of more efficient memory devices.
