Hak N Kim

Title: Hak N Kim: Innovator in Semiconductor Technology

Introduction

Hak N Kim is a notable inventor based in Chungcheongbuk-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for forming titanium nitride films.

Latest Patents

Hak N Kim holds a patent for a method for forming TiN film and TiN film/thin TiSi.sub.2 film. This patent discloses a method for creating a fine-textured titanium nitride film and fine-textured titanium nitride/thin titanium silicide films. The process involves depositing a titanium film containing nitrogen on a semiconductor substrate by sputtering a titanium target that has a titanium nitride film formed on it. This technique allows for the formation of a thin titanium silicide film and a fine-textured nitride film, which are crucial for fabricating semiconductor elements.

Career Highlights

Hak N Kim is associated with LG Semicon Co., Ltd., where he has been instrumental in advancing semiconductor fabrication techniques. His work has led to the development of tungsten bit lines with excellent contact characteristics, which are essential for high-performance COB DRAM elements. The fine-textured titanium nitride/thin titanium silicide films he developed serve as a barrier to prevent tungsten diffusion during high-temperature processes.

Collaborations

Hak N Kim has collaborated with Jeong Soo Byun, contributing to the advancement of semiconductor technologies through their combined expertise.

Conclusion

Hak N Kim's innovative methods in semiconductor technology have paved the way for improved fabrication processes and enhanced device performance. His contributions continue to influence the field significantly.