Lg Semicon Co., Ltd.

Hak N Kim

Jeong Soo Byun

A method for forming a fine-textured titanium nitride film and fine-textured titanium nitride/thin titanium silicide films, and methods for fabricating semiconductor elements utilizing the same are disclosed. A thin titanium silicide film and a fine-textured nitride film are formed on a semiconductor substrate through depositing a titanium film containing nitrogen on the semiconductor substrate by sputtering a titanium target having a titanium nitride film formed thereon and quenching. A bit line of a COB DRAM element may be formed of tungsten, and a tungsten bit line having good contact characteristics and preserved barrier characteristics can be formed since the fine-textured titanium nitride/thin titanium silicide films may serve as a barrier preventing the tungsten from diffusing at high temperature during subsequent capacitor forming processes. The fine-textured titanium nitride/thin titanium silicide films may be applied to an aluminum wiring, and the titanium silicide formed at the contact part may improve the contact characteristics, and TiAl.sub.3 formed between the titanium nitride film and the aluminum wiring may improve the electromigration characteristics of the metal wiring.

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Chungcheongbuk-do, South Korea

Hak N Kim