Fukuoka, Japan

Hajime Sakata

This inventor holds 1 USPTO granted patent. Top assignee: Nscore, Inc.. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hajime Sakata. Retrieved from https://idiyas.com/inventor/hajime-sakata-v3n4yixb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Inventor Hajime Sakata: A Pioneer in Memory Device Technology

Introduction

Hajime Sakata, an innovative inventor based in Fukuoka, Japan, has made significant contributions to the field of semiconductor technology. With a focus on enhancing memory devices, he has developed a patent that showcases his expertise and vision in this critical area of electronics.

Latest Patents

Hajime Sakata holds a patent for a unique memory device featuring a comprehensive test mechanism. This semiconductor memory device comprises a matrix of memory cell transistors, each designed to store data efficiently. The innovation lies in its test circuit, which outputs a signal indicative of the test current flowing through selected memory cells. Additionally, it cleverly incorporates reference cell transistors, a comparison circuit, and a code generating mechanism, collectively optimizing the performance and reliability of the memory device.

Career Highlights

Sakata currently works at Nscore, Inc., where he applies his theoretical knowledge and practical skills to advance semiconductor technology. His work at Nscore exemplifies his commitment to innovation and continuous improvement in memory device design.

Collaborations

During his professional journey, Hajime Sakata has collaborated closely with his coworker, Tomomi Naka. Together, they share ideas and insights that drive their projects forward in the fast-evolving tech landscape.

Conclusion

Hajime Sakata stands out as a notable inventor whose work focuses on enhancing memory technology. His patent reflects a deep understanding of semiconductor devices, ensuring that he remains at the forefront of innovation in this field. As technology continues to advance, his contributions will undoubtedly influence the future of memory devices and their applications in various sectors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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