Location History:
- Tokyo, JA (1976)
- Mizusawa, JP (1987)
- Yokohama, JP (1980 - 1991)
Company Filing History:
Years Active: 1976-1991
Title: Hajime Kamioka: Innovator in Semiconductor Technology
Introduction
Hajime Kamioka is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His innovative work has paved the way for advancements in semiconductor devices, showcasing his expertise and dedication to the industry.
Latest Patents
Kamioka's latest patents include a method for producing a semiconductor device that involves forming selective single crystal regions in insulated pockets. This method includes steps such as forming an insulating layer on a substrate with concave portions and using patterned non-single crystalline silicon to create single crystalline regions through energy ray irradiation. Another notable patent is for a semiconductor device featuring beam annealed silicide film on a semiconductor substrate. This invention ensures excellent electrical contact between the wiring layer and the diffused region while preventing adverse effects from the barrier film.
Career Highlights
Hajime Kamioka has had a distinguished career at Fujitsu Corporation, where he has been instrumental in developing cutting-edge semiconductor technologies. His work has not only advanced the capabilities of semiconductor devices but has also contributed to the overall growth of the industry.
Collaborations
Kamioka has collaborated with notable colleagues such as Mikio Takagi and Mamoru Maeda. These partnerships have fostered innovation and have been crucial in the successful development of various semiconductor technologies.
Conclusion
Hajime Kamioka's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in semiconductor devices, making a lasting impact on the industry.