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For the Inventor, By the Inventor

Yokohama, Japan

Hajime Kamioka

This inventor holds 12 USPTO granted patents. Top assignee: Fujitsu Corporation. Active years: 1976-1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hajime Kamioka. Retrieved from https://idiyas.com/inventor/hajime-kamioka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12

% Patents Active = 100.0

Average Co-Inventor Count = 2.6

ph-index = 8

Forward Citations = 213(Granted Patents)


Location History:

  • Tokyo, JA (1976)
  • Mizusawa, JP (1987)
  • Yokohama, JP (1980 - 1991)

Company Filing History:

goldMedal12 out of 39,371 
 
Fujitsu Corporation
 patents

Years Active: 1976-1991

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12 patents (USPTO):Explore Patents
1. 5011783 - Forming selective single crystal regions in insulated pockets formed on (1991-04-30),
2. 4672740 - Beam annealed silicide film on semiconductor substrate (1987-06-16),
3. 4642883 - Semiconductor bipolar integrated circuit device and method for (1987-02-17),
4. 4503315 - Semiconductor device with fuse (1985-03-05),
5. 4412388 - Method for drying semiconductor substrates (1983-11-01),
6. 4375993 - Method of producing a semiconductor device by simultaneous multiple (1983-03-08),
7. 4333774 - Method for producing walled emitter type bipolar transistors (1982-06-08),
8. 4293590 - Process for high pressure oxidation of silicon (1981-10-06),
9. 4293589 - Process for high pressure oxidation of silicon (1981-10-06),
10. 4275094 - Process for high pressure oxidation of silicon (1981-06-23),
11. 4210473 - Process for producing a semiconductor device (1980-07-01),
12. 3940288 - Method of making a semiconductor device (1976-02-24),

Title: Hajime Kamioka: Innovator in Semiconductor Technology

Introduction

Hajime Kamioka is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His innovative work has paved the way for advancements in semiconductor devices, showcasing his expertise and dedication to the industry.

Latest Patents

Kamioka's latest patents include a method for producing a semiconductor device that involves forming selective single crystal regions in insulated pockets. This method includes steps such as forming an insulating layer on a substrate with concave portions and using patterned non-single crystalline silicon to create single crystalline regions through energy ray irradiation. Another notable patent is for a semiconductor device featuring beam annealed silicide film on a semiconductor substrate. This invention ensures excellent electrical contact between the wiring layer and the diffused region while preventing adverse effects from the barrier film.

Career Highlights

Hajime Kamioka has had a distinguished career at Fujitsu Corporation, where he has been instrumental in developing cutting-edge semiconductor technologies. His work has not only advanced the capabilities of semiconductor devices but has also contributed to the overall growth of the industry.

Collaborations

Kamioka has collaborated with notable colleagues such as Mikio Takagi and Mamoru Maeda. These partnerships have fostered innovation and have been crucial in the successful development of various semiconductor technologies.

Conclusion

Hajime Kamioka's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in semiconductor devices, making a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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