The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 1982
Filed:
Mar. 14, 1980
Applicant:
Inventor:
Hajime Kamioka, Yokohama, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29571 ; 148187 ; 357 34 ; 357 50 ;
Abstract
A base region of a walled emitter type bipolar transistor is formed by an ion implantation process. During the ion implantation, insulating films are disposed on a part of a semiconductor body corresponding to an emitter region, so that the obtained profile of a base-collector junction is terraced, namely, a part of the base-collector junction which is below the insulating films is shallower than the rest of the base-collector junction.