Ramat Gan, Israel

Haim Barak

This inventor holds 1 USPTO granted patent. Top assignees: Bar-Ilan University, Drexel University, University of California. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Haim Barak. Retrieved from https://idiyas.com/inventor/haim-barak-t140nygb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Haim Barak: Innovator in Dielectric Materials and Resonant Devices.

Introduction

Haim Barak is a notable inventor based in Ramat Gan, Israel. He has made significant contributions to the field of dielectric materials and resonant devices. His innovative work focuses on enhancing signal propagation with minimal loss, which is crucial for various technological applications.

Latest Patents

Haim Barak holds a patent for "Solid state tunable ionic oscillator dielectric materials and resonant devices." This invention comprises a ferroelectric material in its ferroelectric phase, designed to enable low-loss propagation of signals with ultra-low dielectric loss at one or more select frequencies. This advancement has the potential to improve the efficiency of electronic devices significantly.

Career Highlights

Throughout his career, Haim Barak has worked with prestigious institutions such as Drexel University and Bar-Ilan University. His experience in these academic environments has allowed him to collaborate with other experts in the field and contribute to groundbreaking research.

Collaborations

Haim Barak has collaborated with notable colleagues, including Jonathan Eli Spanier and Zongquan Gu. These partnerships have fostered a rich exchange of ideas and have been instrumental in advancing their collective research efforts.

Conclusion

Haim Barak's innovative work in dielectric materials and resonant devices exemplifies the impact of dedicated research and collaboration in technology. His contributions continue to influence the field and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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