This inventor holds 1 USPTO granted patent. Top assignee: Shanghai Huali Microelectronics Corporation. Active years: 2018.
Company Filing History:
Years Active: 2018
Title: Hailan Yi: Innovator in FinFET Technology
Introduction
Hailan Yi is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of FinFET devices. His innovative approaches have led to advancements that enhance the performance and reliability of these devices.
Latest Patents
Hailan Yi holds a patent for the "Integration process of finFET spacer formation." This novel plasma process improves upon conventional methods used during the formation of spacers for FinFET devices. Under this innovative plasma process, an oxide layer is grown over sidewall materials, and low energy plasma gas is utilized for the over-etching of the corner areas of the sidewalls. The oxide layer effectively protects the sidewall materials during the over-etching, thereby reducing critical dimension (CD) losses introduced by the low energy plasma gas. This improved etching technique safeguards the fin structure from CD losses compared to traditional low energy plasma processes and minimizes damage to the fin silicon structure with reduced silicon losses when compared to high energy plasma processes. Hailan Yi has 1 patent to his name.
Career Highlights
Hailan Yi is currently employed at Shanghai Huali Microelectronics Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of FinFET devices, which are crucial for modern electronic applications.
Collaborations
Hailan has collaborated with notable colleagues, including Yongyue Chen and Tong Lei. Their combined expertise has contributed to the successful development of innovative technologies in the semiconductor industry.
Conclusion
Hailan Yi's contributions to FinFET technology exemplify the impact of innovative thinking in the semiconductor field. His patent for the integration process of finFET spacer formation showcases his commitment to enhancing device performance and reliability.