Haijiang Yu

Title: Haijiang Yu: Innovator in Semiconductor Technology

Introduction

Haijiang Yu is a prominent inventor based in Sunnyvale, CA, known for his contributions to semiconductor technology. He has made significant strides in the field, particularly with his innovative methods for forming silicides in electronic devices.

Latest Patents

Haijiang Yu holds 1 patent titled "Methods of forming silicides of different thicknesses on different structures." This patent describes a process where the gate and active regions of a device are formed through alternating steps of applying and removing nitride and oxide layers. This technique allows for the exposure of silicon in specific areas while keeping silicon or polysilicon covered in others. Metal layers are then deposited over the exposed silicon or polysilicon, and through annealing, a silicide layer is formed in the selected exposed areas. The oxide and/or nitride layers are subsequently removed from the covered areas, and another metal layer is deposited. The anneal process is repeated, resulting in silicide of varying thicknesses over the different exposed areas.

Career Highlights

Haijiang Yu is currently employed at Advanced Micro Devices Corporation, a leading company in the semiconductor industry. His work has been instrumental in advancing the technology used in modern electronic devices.

Collaborations

Throughout his career, Haijiang has collaborated with notable colleagues, including Wen Yu and Paul Raymond Besser. These partnerships have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Haijiang Yu's contributions to the field of semiconductor technology, particularly through his patented methods, highlight his role as an influential inventor. His work continues to impact the industry and pave the way for future innovations.