Shanghai, China

Haibin Fang


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Haibin Fang: Innovator in Delay Locked Loop Circuitry

Introduction

Haibin Fang is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of delay locked loop circuitry systems. His innovative work has led to the filing of a patent that addresses critical issues in memory devices.

Latest Patents

Haibin Fang holds a patent for a Delay Locked Loop (DLL) circuitry system and a memory device. This invention includes a timer unit and a DLL circuit that are coupled together. The timer unit generates a DLL enable signal based on a signal that instructs entry into a low power consumption mode and a predefined timer condition. This design allows the DLL circuit to realign an internal clock signal with an external clock signal, preventing misalignment that can occur when the memory device enters low power mode. Additionally, it mitigates potential read or write errors that may arise immediately after exiting this low power mode.

Career Highlights

Haibin Fang is currently employed at Gigadevice Semiconductor (Shanghai) Inc. His role at the company involves working on advanced semiconductor technologies and contributing to innovative solutions in the industry. His expertise in delay locked loop circuitry has positioned him as a valuable asset to his team.

Collaborations

Haibin Fang collaborates with talented colleagues, including Biyun Huang and Dongsheng Tang. Together, they work on various projects that push the boundaries of semiconductor technology and enhance the performance of memory devices.

Conclusion

Haibin Fang's contributions to the field of semiconductor technology, particularly through his patent on delay locked loop circuitry, demonstrate his innovative spirit and technical expertise. His work continues to influence advancements in memory devices and semiconductor systems.

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