Company Filing History:
Years Active: 2010
Title: **Innovator Hai-Ning Wang: A Pioneer in Semiconductor Technology**
Introduction
Hai-Ning Wang is a prominent inventor based in Hsin Tien, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a patent that reflects his innovative spirit and technical expertise. His work has implications for the development of more efficient electronic devices.
Latest Patents
Wang holds a patent for a "Low Voltage Transient Voltage Suppressor with Tapered Recess Extending into Substrate of Device Allowing for Reduced Breakdown Voltage." This invention describes a semiconductor junction device that features a substrate made of low resistivity semiconductor material with a specific polarity. The innovative design includes a tapered recess that extends inward from the substrate's upper surface, allowing for enhanced electrical performance by leveraging a semiconductor layer with opposite polarity. This geometry ultimately leads to reduced breakdown voltage, making it a valuable advancement in semiconductor applications.
Career Highlights
Wang's career has been marked by his tenure at Vishay General Semiconductor, Inc., where he continues to contribute to the development of cutting-edge semiconductor technologies. His role has allowed him to apply his knowledge to practical applications, influencing the landscape of electronic component manufacturing.
Collaborations
Throughout his career, Wang has collaborated with notable colleagues, including Sheng-Huei Dai and Ya-Chin King. These partnerships highlight the importance of teamwork and knowledge sharing in driving innovation within the competitive semiconductor industry.
Conclusion
Hai-Ning Wang stands out as a key figure in the semiconductor domain, with a patent that exemplifies innovation and practical application. His work not only advances technology but also sets the stage for further developments in electronic devices, showcasing the pivotal role of inventors in shaping the future of technology.