Hai Hui Huang

Title: Innovations of Hai Hui Huang in 3D Memory Devices

Introduction

Hai Hui Huang is a notable inventor based in Wuhan, China. He has made significant contributions to the field of memory devices, particularly in the development of methods for forming channel holes in three-dimensional memory devices. His innovative approach has the potential to enhance the efficiency and performance of memory technology.

Latest Patents

Huang holds a patent titled "Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer." This patent describes embodiments of methods for forming channel holes in 3D memory devices using a nonconformal sacrificial layer. In an example, a dielectric stack, which includes interleaved first dielectric layers and second dielectric layers, is formed on a substrate. An opening extending vertically through the dielectric stack is created. A nonconformal sacrificial layer is then formed along the sidewall of the opening, resulting in a decrease in the diameter of the opening. After removing the nonconformal sacrificial layer and part of the dielectric stack that abuts it, a channel structure is formed in the opening.

Career Highlights

Huang is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to work on advancing memory technology. His expertise and innovative methods have positioned him as a key figure in the development of next-generation memory devices.

Collaborations

Huang collaborates with talented colleagues, including Baoyou Chen and Weihua Cheng, who contribute to the innovative projects at Yangtze Memory Technologies Co., Ltd. Their combined efforts enhance the research and development of advanced memory solutions.

Conclusion

Hai Hui Huang's contributions to the field of 3D memory devices exemplify the importance of innovation in technology. His patented methods are paving the way for advancements in memory efficiency and performance.