Fremont, CA, United States of America

Hai Hong Wang

This inventor holds 3 USPTO granted patents. Top assignee: Advanced Micro Devices Corporation. Active years: 2004-2005.


% Patents Active = 33.3

Average Co-Inventor Count = 4.3

ph-index = 2

Forward Citations = 45(Granted Patents)


Company Filing History:


Years Active: 2004-2005

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3 patents (USPTO):Explore Patents

Title: Innovations of Hai Hong Wang in Semiconductor Technology

Introduction

Hai Hong Wang is a notable inventor based in Fremont, CA, who has made significant contributions to the field of semiconductor technology. With a total of 3 patents, his work focuses on enhancing the reliability and performance of ultra-thin gate dielectric semiconductor devices. His innovative approaches have paved the way for advancements in the measurement of gate dielectric thickness and parasitic capacitance.

Latest Patents

One of Hai Hong Wang's latest patents is titled "Array of gate dielectric structures to measure gate dielectric thickness and parasitic capacitance." This invention addresses the challenges associated with accurately determining gate dielectric thickness, which is crucial for producing high-reliability and high-performance ultra-thin gate dielectric semiconductor devices. Large area gate dielectric capacitors with ultra-thin gate dielectric layers often suffer from high gate leakage, complicating the accurate measurement of gate dielectric thickness. Furthermore, the measurement of gate dielectric thickness in smaller area capacitors is hindered by their relatively large parasitic capacitance. To overcome these challenges, Wang's invention involves the formation of first and second dummy structures on a wafer, which allow for the precise determination of gate dielectric thickness. These dummy structures are designed to be similar to the gate dielectric capacitors, with the first dummy structures lacking the second electrode and the second dummy structures lacking the first electrode. By subtracting the parasitic capacitances measured at these dummy structures, the capacitance and, consequently, the thickness of the gate dielectric capacitor can be accurately determined.

Career Highlights

Hai Hong Wang is currently employed at Advanced Micro Devices Corporation, where he continues to innovate in the semiconductor field. His work has been instrumental in advancing the technology used in modern electronic devices.

Collaborations

Wang has collaborated with notable colleagues, including Mark W Michael and William George En, contributing to a dynamic and innovative work environment.

Conclusion

Hai Hong Wang's contributions to semiconductor technology, particularly in the measurement of gate dielectric thickness and parasitic capacitance, highlight his role as a leading inventor in the field. His innovative patents and collaborations continue to influence advancements in high-performance semiconductor devices.

Profile summary based on public USPTO records.
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