Suwon-si, South Korea

Haedong No

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Haedong No: Innovator in Memory Controller Technology

Introduction

Haedong No is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of memory technology, particularly through his innovative work at Samsung Electronics Co., Ltd. His expertise in memory controllers has led to advancements that enhance the performance and efficiency of memory systems.

Latest Patents

Haedong No holds a patent for a "Memory controller, memory system including the same, and operation method of memory controller for performing read operation based on read voltage level." This patent outlines a method for operating a memory controller that manages a memory device with multiple memory cells. The method includes transmitting a valley search command to the memory device, obtaining a cell count value and a valley voltage level, and determining a corrected read voltage level based on an offset value. This innovation allows for improved read operations through optimized voltage levels.

Career Highlights

Throughout his career, Haedong No has been instrumental in developing cutting-edge memory technologies. His work at Samsung Electronics Co., Ltd. has positioned him as a key player in the advancement of memory systems. His dedication to innovation is evident in his patent, which reflects his commitment to enhancing memory device performance.

Collaborations

Haedong No has collaborated with talented colleagues, including Youjin Jeon and Minjin Jo. These partnerships have fostered a creative environment that encourages the development of innovative solutions in memory technology.

Conclusion

Haedong No's contributions to memory controller technology exemplify his role as a leading inventor in the field. His patent and collaborative efforts at Samsung Electronics Co., Ltd. highlight his commitment to advancing memory systems. His work continues to influence the future of memory technology.

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