Ha Na Kim

Title: Ha Na Kim: Inventor in Thin-Film and Semiconductor Materials

Introduction

Ha Na Kim is an inventor based in Suwon-si, South Korea. Her patent work focuses on aluminum precursors and methods for forming area-selective thin films, technologies relevant to thin-film processing and memory-device manufacturing. She is associated with Egtm Co., Ltd. and has 2 patents.

Latest Patents

Kim’s listed patent work includes two inventions related to thin-film fabrication.

“Aluminum Precursor, Method of Forming a Thin Layer Using the Same, Method of Manufacturing the Same, and Method of Manufacturing Memory Device” describes preparing an aluminum precursor by mixing specified compounds in defined molar proportions. The disclosure also addresses using the precursor to form a thin layer and manufacturing a memory device.

“Method for Forming Region-Selective Thin Film Using Selectivating Agent” describes a process for forming a thin film selectively on a substrate. A selectivating material is supplied to the chamber and adsorbed onto a non-growth region. After purging, a precursor is introduced and adsorbed onto a growth region. A reaction material is then supplied to react with the adsorbed precursor and form the film.

Career Highlights

Kim’s patent portfolio reflects work on precursor chemistry and selective thin-film deposition. These approaches address how materials are prepared and how films are formed on targeted regions of a substrate.

Collaborations

Kim is associated with Egtm Co., Ltd. Her listed coworkers include Jae Min Kim and Kyu Ho Cho.

Conclusion

Ha Na Kim’s two patents highlight her contributions to aluminum precursor development and region-selective thin-film formation, with applications that include memory-device manufacturing.