Kyungki-do, South Korea

Gyung-hoon Hong


Average Co-Inventor Count = 9.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Innovations of Gyung-hoon Hong in Dielectric Region Formation

Introduction

Gyung-hoon Hong is a notable inventor based in Kyungki-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the formation of multilayer dielectric regions. His innovative approaches have implications for the development of advanced memory cell capacitors.

Latest Patents

Gyung-hoon Hong holds a patent for "Methods of forming multilayer dielectric regions using varied deposition parameters." This patent describes a process for creating a dielectric region by depositing a metal oxide, such as tantalum oxide, on a substrate. The method involves maintaining specific atmospheric conditions, temperature ranges, and pressure ranges to achieve desirable step coverage in the dielectric layers. The first layer is formed at a lower deposition rate, while the second layer is deposited at a higher rate, enhancing the overall performance of the dielectric region.

Career Highlights

Hong is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of innovation in semiconductor manufacturing. His work has been instrumental in advancing the technology used in memory devices, contributing to the efficiency and reliability of modern electronics.

Collaborations

Gyung-hoon Hong has collaborated with talented colleagues, including Cha-young Yoo and Han-jin Lim. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Gyung-hoon Hong's contributions to the field of semiconductor technology, particularly through his patent on multilayer dielectric regions, highlight his role as an influential inventor. His work at Samsung Electronics Co., Ltd. continues to shape the future of memory cell capacitors and related technologies.

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