Samsung Electronics Co., Ltd.

Gyung-hoon Hong

Seok-Jun Won

Cha-young Yoo

Han-jin Lim

Se-Jin Lee

Wan-Don Kim

Soon-yeon Park

Han-mei Choi

Yong-kuk Jeong

A dielectric region for a device such as a memory cell capacitor is formed by depositing a metal oxide, such as tantalum oxide, on a substrate at a first deposition rate in a first atmosphere maintained within a first temperature range and a first pressure range that produce a first tantalum oxide layer with a desirable step coverage. Metal oxide is subsequently deposited on the first metal oxide layer in a second atmosphere maintained within a second temperature range and a second pressure range that produce a second deposition rate greater than the first deposition rate to form a second tantalum oxide layer on the first tantalum oxide layer. For example, the first atmosphere may be maintained at a temperature in a range from about 350&deg; C. to about 460&deg; C. and a pressure in a range from about 0.01 Torr to about 2.0 Torr during formation of a first tantalum oxide layer, and the second atmosphere may be maintained at a temperature in a range from about 400&deg; C. to about 500&deg; C. and a pressure in a range from about 0.1 Torr to about 10.0 Torr during formation of a second tantalum oxide layer.

Methods of forming multilayer dielectric regions using varied deposition parameters

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Kyungki-do, South Korea

Gyung-hoon Hong