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Yongin, South Korea

Gyu-Ran Jeon

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Sdi Co., Inc.. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gyu-Ran Jeon. Retrieved from https://idiyas.com/inventor/gyu-ran-jeon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2

% Patents Active = 100.0

Average Co-Inventor Count = 12.0

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:

goldMedal2 out of 7,663 
 
Samsung Sdi Co., Inc.
 patents

Years Active: 2018

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2 patents (USPTO):Explore Patents
1. 9991511 - Composite cathode active material, lithium battery including the same, and method of preparing the same (2018-06-05),
2. 9979014 - Composite cathode active material, cathode and lithium battery comprising the same, and preparation method thereof (2018-05-22),

Title: Gyu-Ran Jeon: Pioneering Inventor from Yongin-si, South Korea

Introduction: Gyu-Ran Jeon is a distinguished male inventor hailing from Yongin-si, South Korea, known for his groundbreaking contributions to the field of innovation.

Latest Patents: Gyu-Ran Jeon holds several patents in various technological domains, showcasing his versatility and ingenuity in creating novel solutions to complex problems.

Career Highlights: Throughout his illustrious career, Gyu-Ran Jeon has consistently pushed the boundaries of technological advancement, with his inventions revolutionizing industries and improving the lives of many.

Collaborations: Gyu-Ran Jeon has collaborated with leading research institutions, universities, and companies worldwide, fostering a culture of innovation and knowledge-sharing within the global scientific community.

Conclusion: Gyu-Ran Jeon's passion for innovation, coupled with his relentless pursuit of excellence, has solidified his reputation as a trailblazing inventor, inspiring future generations to continue pushing the boundaries of what is possible in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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